Bransen Plasma Asher
An O2 RF plasma can be used at CAMD to strip one to five microns of resist from up
to 6 four inch wafers at a time. The Bransen Asher is run at 600W at time, temperature,
or manual control.
Minor modification – The Bransen Plasma Asher reduced Nitrogen purge flow for the
safe ashing of thin fragile membranes
Features
- 1500 W 13.56 MHz RF generator
- Thermal probe
- Automatic processing
- Capable of processing with up to three gases (only one installed)
Capabilities
- Reactive ion etching with O2
Applications
- Resist stripping
- Substrate cleaning Bransen Plasma Asher Manual.pdf